Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate

被引：6

作者：

Plis, Elena ^{[1
]}

Klein, Brianna ^{[1
]}

Myers, Stephen ^{[1
]}

Gautam, Nutan ^{[1
]}

Rotter, Thomas J. ^{[1
]}

Dawson, Ralph L. ^{[1
]}

Krishna, Sanjay ^{[1
]}

Lee, Sang Jun ^{[2
]}

Kim, Young Heon ^{[2
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] Korea Res Inst Stand & Sci, Taejon 305600, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 03期

关键词：

MOLECULAR-BEAM EPITAXY; PHOTODIODES; OPERATION; RANGE;

D O I：

10.1116/1.4798650

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the authors report on the growth of InAs/GaSb type-II strained layer superlattice (T2SL) material on (111) B GaSb substrates. Both substrate temperature and V/III beam equivalent pressure ratio were varied to optimize the crystalline and optical quality of the T2SL material. Midwave infrared (lambda(100%) (cut-off) similar to 5.6 mu m at 295 K) InAs/GaSb T2SL detectors were then grown on the same substrate orientation. After detailed radiometric characterization, the authors have measured, at 295 K and 4 mu m, a dark current density of 0.53 A/cm(2) (at -50 mV) and a Johnson noise limited specific detectivity (D*) of 8.5 x 10(9) Jones, which are superior values to the state-of-the-art T2SL detectors grown on conventional GaSb (100) substrates and operating in a similar wavelength range. (C) 2013 American Vacuum Society.

引用

页数：6

共 29 条

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