Single-crystalline metal-oxide dielectrics for top-gate 2D transistors ( vol 632, pg 788, 2024)

被引：1
|
作者：
Zeng, Daobing
Zhang, Ziyang
Xue, Zhongying
Zhang, Miao
Chu, Paul K.
Mei, Yongfeng
Tian, Ziao
Di, Zengfeng
机构：
[1] Chinese Academy of Sciences,State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology
[2] University of Chinese Academy of Sciences,Center of Materials Science and Optoelectronics Engineering
[3] City University of Hong Kong,Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering
[4] Fudan University,Department of Materials Science
来源：
NATURE | 2024年 / 633卷 / 8031期
关键词：
D O I：
10.1038/s41586-024-08001-y
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：E5 / E5
页数：1
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