MOVPE growth and characterization of GaAs/GaAsBi/GaAs p-i-n structure

被引:1
作者
Ben Abdelwahed, A. [1 ]
Zouaghi, S. [1 ]
Fitouri, H. [1 ]
Rebey, A. [1 ,2 ]
机构
[1] Univ Monastir, Fac Sci Monastir, Lab Rech Heteroepitaxies & Applicat, Monastir 5019, Tunisia
[2] Qassim Univ, Coll Sci, Dept Phys, POB 6622, Buraydah, Al Qassim, Saudi Arabia
关键词
MOLECULAR-BEAM EPITAXY; BAND-GAP; GAAS1-XBIX; GAAS; PHOTOREFLECTANCE; SEMICONDUCTORS; ALLOY;
D O I
10.1016/j.optmat.2024.115822
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, we report on the epitaxial growth and characterization of the GaAs/GaAsBi/GaAs p-i-n structure. The samples were grown on a GaAs (001) substrate using atmospheric pressure metal-organic vapor phase epitaxy (AP-MOVPE). The effect of the barrier growth temperature of p and n GaAs layers and GaAsBi thickness on the behavior of the structure was investigated. The conductivity of GaAs layers is optimized by adjusting mutually the growth temperature and the III/V ratio. High resolution X-ray diffraction (HRXRD) and spectroscopic photoreflectance (PR) techniques have been used to quantify the physical properties of compound materials. For a structure having a nanometric dimension, we have not obviously identified any signature of confined level in the diluted GaAsBi layer, which is supposed to be a well. To avoid any overlap between barrier and well PR responses, the Bi content has been increased using an alternating injection growth procedure for the epitaxy of the GaAsBi active region. A relatively high Bi composition of 7% has been successfully reached, and a quantum confinement is observed at 1.15 eV. This finding is supported by the numerical results giving the confined levels determined from the resolution of the Schro<spacing diaeresis>dinger equation in the GaAsBi well. This work illustrates that the GaAs/GaAsBi/GaAs structures can be achieved with a very high Bi content by the adoption of alternated bismuth flows during growth and provides a promising route towards the realization of high-efficiency infrared emitters.
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页数:7
相关论文
共 43 条
[1]   The band structure calculation of tensile strained GaNAsBi/GaAs quantum well heterostructure [J].
Ajnef, N. ;
Habchi, M. M. ;
Rebey, A. .
MICRO AND NANOSTRUCTURES, 2022, 164
[2]   Incorporation modes of silicon in GaAs: Si grown by metalorganic vapor phase epitaxy [J].
Beji, L ;
Rebey, A ;
El Jani, B .
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 1998, 4 (03) :269-273
[3]   Piezoelectric field measurements by photoreflectance in strained InGaAs/GaAs structures grown on polar substrates [J].
Berger, PD ;
Bru, C ;
Baltagi, Y ;
Benyattou, T ;
Berenguer, M ;
Guillot, G ;
Marcadet, X ;
Nagle, J .
MICROELECTRONICS JOURNAL, 1995, 26 (08) :827-833
[4]   Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy [J].
Bilel, C. ;
Fitouri, H. ;
Zaied, I. ;
Bchetnia, A. ;
Rebey, A. ;
El Jani, B. .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 31 :100-105
[5]   Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy [J].
Chine, Z. ;
Fitouri, H. ;
Zaied, I. ;
Rebey, A. ;
El Jani, B. .
JOURNAL OF CRYSTAL GROWTH, 2011, 330 (01) :35-38
[6]   LATTICE CONTRACTION DUE TO CARBON DOPING OF GAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].
DELYON, TJ ;
WOODALL, JM ;
GOORSKY, MS ;
KIRCHNER, PD .
APPLIED PHYSICS LETTERS, 1990, 56 (11) :1040-1042
[7]  
Dudutiene E, 2021, LITH J PHYS, V61, P142
[8]   MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures [J].
Fan, Dongsheng ;
Grant, Perry C. ;
Yu, Shui-Qing ;
Dorogan, Vitaliy G. ;
Hu, Xian ;
Zeng, Zhaoquan ;
Li, Chen ;
Hawkridge, Michael E. ;
Benamara, Mourad ;
Mazur, Yuriy I. ;
Salamo, Gregory J. ;
Johnson, Shane R. ;
Wang, Zhiming M. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (03)
[9]   Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures [J].
Fan, Dongsheng ;
Zeng, Zhaoquan ;
Hu, Xian ;
Dorogan, Vitaliy G. ;
Li, Chen ;
Benamara, Mourad ;
Hawkridge, Michael E. ;
Mazur, Yuriy I. ;
Yu, Shui-Qing ;
Johnson, Shane R. ;
Wang, Zhiming M. ;
Salamo, Gregory J. .
APPLIED PHYSICS LETTERS, 2012, 101 (18)
[10]   AP-MOVPE of thin GaAs1-xBix alloys [J].
Fitouri, H. ;
Moussa, I. ;
Rebey, A. ;
Fouzri, A. ;
El Jani, B. .
JOURNAL OF CRYSTAL GROWTH, 2006, 295 (02) :114-118