Effect of Embedding WO3NPs on the Structural, Morphological, Optical, and Dielectric Properties of PVA-CMC-PEG Polymeric Matrix Towards Optoelectronic and Energy Storage Applications

被引:15
作者
Ghanim, Ihsan R. [1 ]
Aldulaimi, Nisreen R. [1 ]
Jabbar, Safa Ahmed [2 ]
Hashim, Fouad Sh. [2 ]
Abdali, Karar [1 ]
Al-Bermany, Ehssan [2 ]
Tuama, Alaa Nihad [2 ]
机构
[1] Iraq Minist Educ, Baghdad, Iraq
[2] Univ Babylon, Coll Educ Pure Sci, Dept Phys, Babylon, Iraq
关键词
PVA-CMC-PEG; WO3; Optical properties; Dielectric properties; Energy storage;
D O I
10.1007/s10904-024-03331-w
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Pure and PVA-CMC-PEG films decorated with several low amounts of WO(3)NPs doping were fabricated via the solution casting technique. The structural, morphological, optical, and dielectric properties of the as-prepared films were comprehensively investigated. FTIR analysis manifested that there was no change in the chemical structure of the polymer blend due to the decoration of WO(3)NPs. FESEM images show that the control sample, F1, has a homogeneous texture, a smooth surface, and no cracks, and the infused WO(3)NPs were finely distributed as grids and wrinkled-like shapes on the surface of the matrix. The optical results revealed an immense enhancement in the absorbance, from 33 to 98%. The allowed and forbidden indirect band gaps of the F1 sample (4.35 eV, 4.20 eV) dropped to (3.60 eV, 3.25 eV) in the F4 sample. The DC electrical conductivity of the nanocomposite films was notably increased from 1.93 x 10(- 8) Omega.cm(- 1) to 1.14 x 10(- 5) Omega.cm(- 1) with an increase in the amount of WO(3)NPs at 90 degrees C. The DC results also indicated that all films have a single activation energy, whose values decreased from 2.2580 to 1.4007 eV. The effect of WO(3)NPs on the AC conductivity and dielectric constants was studied, where the dielectric constant of the nanocomposite films was higher than that of the host matrix with a reduced dielectric loss. Ultimately, these films are promising candidates for optoelectronic and energy storage applications.
引用
收藏
页码:1143 / 1151
页数:9
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