10 x 10 Ga2O3-based solar-blind UV detector array and imaging characteristic

被引：0
作者：
Chen, Haifeng [1 ]
Liu, Zhanhang [1 ]
Zhang, Yixin [1 ]
Jia, Feilong [1 ]
Wu, Chenlu [1 ]
Lu, Qin [1 ]
Liu, Xiangtai [1 ]
Wang, Shaoqing [1 ]
机构：
[1] Xian Univ Posts & Telecommun, Sch Elect Engn, Key Lab Adv Semicond Devices & Mat, Xian 710121, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2024年 / 45卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Ga2O3; solar-blind ultraviolet; photodetector; array; photo-to-dark current ratio; PHOTODETECTORS;
D O I：
10.1088/1674-4926/24030005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A 10 x 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga2O3 film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 x 10(5), responsivity (R) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 x 103%, detectivity (D *) of 1.5 x 10(14 )Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 degrees C, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga2O3 solar-blind UV detectors.
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页数：9
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