10 x 10 Ga2O3-based solar-blind UV detector array and imaging characteristic

A 10 x 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga2O3 film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 x 10(5), responsivity (R) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 x 103%, detectivity (D *) of 1.5 x 10(14 )Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 degrees C, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga2O3 solar-blind UV detectors.