Influence of bias voltage on the Ar/CH2F2/O2 plasma etching of Si3N4 films

被引：1

作者：

Kuboi, Shuichi ^{[1
,2
]}

Kataoka, Junji ^{[1
]}

Iino, Daiki ^{[1
]}

Kurihara, Kazuaki ^{[1
]}

Toyoda, Hirotaka ^{[2
,3
,4
]}

Fukumizu, Hiroyuki ^{[1
]}

机构：

[1] Kioxia Corp, Frontier Technol R&D Inst, Kanagawa Ku, Yokohama, Kanagawa 2210022, Japan

[2] Nagoya Univ, Dept Elect, Furo Cho,Chikusa Ku, Nagoya 4648603, Japan

[3] Nagoya Univ, Ctr Low Temp Plasma Sci, Furo Cho,Chikusa Ku, Nagoya 4648603, Japan

[4] Natl Inst Fus Sci, Orosi Cho, Toki 5095292, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 08期

关键词：

Si3N4; films; O-containing hydrofluorocarbon gas; surface etching mechanism; high-bias voltage; 3D NAND flash-memory; SILICON-NITRIDE; SIO2; MECHANISM; DEPOSITION; DIOXIDE;

D O I：

10.35848/1347-4065/ad6d20

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The etching mechanism of silicon nitride (Si3N4) films depending on peak-to-peak bias voltage ( V-pp ) in an Ar/CH2F2/O-2 gas-mixture plasmas for high-aspect-ratio etching process was investigated. It was observed that the Si3N4 film etch rate initially decreased with an increase in the V-pp up to 3630 V, but then increased beyond this threshold. This unusual etching behavior can be attributed to the formation of a modified layer on the surface of the Si3N4 film. The characteristics of the modified layer, such as thickness and atomic composition, were found to be strongly influenced by the ion energy and gas chemistry of the process conditions.

引用

页数：5

共 37 条

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