Solution-processed high-k photopatternable polymers for low-voltage electronics

被引：1

作者：

Sun, Qingqing ^{[1
]}

Ge, Hongwei ^{[1
]}

Wang, Shuai ^{[1
]}

Zhang, Xiaohang ^{[1
]}

Zhang, Juzhong ^{[1
]}

Li, Shisheng ^{[2
]}

Yao, Zhiqiang ^{[1
]}

Zhang, Lei ^{[3
]}

Liu, Xuying ^{[1
]}

机构：

[1] Zhengzhou Univ, Natl Engn Res Ctr Adv Polymer Proc Technol, State Key Lab Struct Anal Optimizat & CAE Softwar, Sch Mat Sci & Engn, Zhengzhou 450002, Peoples R China

[2] Natl Inst Mat Sci NIMS, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050044, Japan

[3] Beijing Univ Chem Technol, Beijing Adv Innovat Ctr Soft Matter Sci & Engn, Beijing 100029, Peoples R China

来源：

MATERIALS HORIZONS | 2024年 / 11卷 / 22期

基金：

中国国家自然科学基金;

关键词：

Crosslinking - Elastomers - Flexible electronics - Gallium compounds - High-k dielectric - Surface discharges;

D O I：

10.1039/d4mh00725e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High dielectric constant (k) polymers have been widely explored for flexible, low-power-consumption electronic devices. In this work, solution-processable high-k polymers were designed and synthesized by ultraviolet (UV) triggered crosslinking at a low temperature (60 degrees C). The highly crosslinked network allows for high resistance to organic solvents and high breakdown strength over 2 MV cm(-1). The UV-crosslinking capability of the polymers enables them to achieve a high-resolution pattern with a feature size down to 1 mu m. Further investigation suggests that the polar cyano pendants in side chains are responsible for increasing the dielectric constant up to 10 in a large-area device array, thereby contributing to a low driving voltage of 5 V and high field-effect mobility exceeding 20 cm(2) V-1 s(-1) in indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). In addition, the solution-processable high-k dielectric polymers were utilized to fabricate flexible low-voltage organic TFTs, which show highly reliable and reproducible mechanical stability at a bending radius of 5 mm after 1000 cycles. And also, the high radiation stability of the dielectric polymers was observed in a UV-sensitive TFT device, thereby achieving highly reproducible pattern recognition, which is promising for artificial optic nerve circuits.

引用

页码：5650 / 5661

页数：12