Heavy Boron-Doped Silicon Tunneling Inter-layer Enables Efficient Silicon Heterojunction Solar Cells

被引：2

作者：

Zhou, Yinuo ^{[1
,2
]}

Zhang, Honghua ^{[1
,2
]}

Li, Zhenfei ^{[1
]}

Huang, Shenglei ^{[1
,3
]}

Du, Junlin ^{[1
]}

Han, Anjun ^{[1
]}

Shi, Jianhua ^{[1
]}

Wang, Guangyuan ^{[1
]}

Shi, Qiang ^{[1
]}

Zhao, Wenjie ^{[1
]}

Fu, Haoxin ^{[4
]}

Fan, Bin ^{[4
]}

Meng, Fanying ^{[1
,2
]}

Liu, Wenzhu ^{[1
,2
]}

Liu, Zhengxin ^{[1
,2
,3
]}

Zhang, Liping ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, State Key Lab Mat Integrated Circuits, Shanghai 200050, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[3] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

[4] Tongwei New Energy Chengdu Co Ltd, Chengdu, Sichuan, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2024年 / 16卷 / 35期

基金：

中国国家自然科学基金;

关键词：

Hole carrier collection; silicon heterojunction solarcells; valence band offsets; multi-level valenceband tail states; hydrogenated nanocrystalline silicon; HYDROGENATED AMORPHOUS-SILICON; MICROCRYSTALLINE SILICON; CONTACT; EMITTER; OPTIMIZATION; WAFERS;

D O I：

10.1021/acsami.4c07897

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

P-type hydrogenated nanocrystalline silicon (nc-Si:H) has been used as a hole-selective layer for efficient n-type crystalline silicon heterojunction (SHJ) solar cells. However, the presence of an additional valence band offset at the interface between intrinsic amorphous hydrogenated silicon and p-type nc-Si:H films will limit the hole carrier transportation. In this work, it has been found that when a heavily boron-doped silicon oxide layer deposited with high hydrogen dilution to silane (p(B)) was inserted into their interface, the fill factor of SHJ solar cells increases 3% absolutely because of the reduced valence band offset and the increased opportunity to provide a hopping tunnel assisted by the doping energy level and valence band tail states. Furthermore, the additional boron incorporation in intrinsic amorphous silicon adjacent to p(B) helps to enhance the built-in electric field, thus increasing the hole selectivity. By these means, the power conversion efficiency was improved from 23.9% to approximately 25%.

引用

页码：46889 / 46896

页数：8

共 30 条

[1] Improving the a-Si:H(p) rear emitter contact of n-type silicon solar cells [J].