Nitrogen-Doped WO3 Nanoparticles as Electrode Materials in All-in-One Supercapacitor Devices

被引：6

作者：

Ammar, Ameen Uddin ^{[1
]}

Popa, Adriana ^{[2
]}

Toloman, Dana ^{[2
]}

Macavei, Sergiu ^{[2
]}

Ciorita, Alexandra ^{[2
,3
]}

Bocirnea, Amelia-Elena ^{[4
]}

Stan, Manuela ^{[2
]}

Erdem, Emre ^{[1
]}

Rostas, Arpad Mihai ^{[2
]}

机构：

[1] Sabanci Univ, Fac Engn & Nat Sci, TR-34956 Istanbul, Turkiye

[2] Natl Inst Isotop & Mol Technol, Cluj Napoca 400293, Romania

[3] Babes Bolyai Univ, Fac Biol & Geol, Cluj Napoca 400015, Romania

[4] Natl Inst Mat Phys, Magurele 077125, Romania

来源：

ACS APPLIED ENGINEERING MATERIALS | 2024年 / 2卷 / 01期

关键词：

WO3; N-doping; supercapacitors; EPRspectroscopy; energy storage; ENERGY DENSITY; TUNGSTEN-OXIDE; STORAGE; PHASE; ZNO;

D O I：

10.1021/acsaenm.3c00654

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of the annealing temperature on 1% nitrogen-doped WO3 materials was studied, which were then used as electrode materials for high-performance supercapacitor (SC) devices. The supercapacitive performance of the proposed materials was strongly influenced by the doping element and the annealing temperature by directly changing the defect structure of the host material. The 1% N-doped WO3 materials annealed at different temperatures were thoroughly characterized through various characterization techniques, including electron paramagnetic resonance and photoluminescence spectroscopy, giving insight into the effect of N-doping on the defect structure and optical properties of WO3. When the WO3:N materials were used as electrode material in symmetric SCs, the doping element and the annealing temperature improved the electrochemical performance. No booster materials (such as carbon black) were used in the symmetric SC designs, showing increased specific capacitance (102 F/g) and energy density (14.6 W h/kg) values.

引用

页码：126 / 135

页数：10

共 45 条

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