Non-contact and non-destructive in-situ inspection for CdSe quantum dot film based on the principle of field-induced photoluminescence quenching

被引：0

作者：

Gong, Zheng ^{[1
]}

Li, Wenhao ^{[1
]}

Zhang, Shuqian ^{[1
]}

Li, Junlong ^{[1
]}

Su, Hao ^{[1
]}

Huang, Wei ^{[1
]}

Wang, Kun ^{[1
]}

Zhu, Jiaye ^{[1
]}

Zhou, Xiongtu ^{[1
,2
]}

Zhang, Yongai ^{[1
,2
]}

Guo, Tailiang ^{[1
,2
]}

Wu, Chaoxing ^{[1
,2
]}

机构：

[1] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China

[2] Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China

来源：

SCIENCE CHINA-MATERIALS | 2024年 / 67卷 / 11期

关键词：

non-contact inspection; non-destructive inspection; field-induced photoluminescence quenching; quantum dots; EXTERNAL ELECTRIC-FIELD; DYNAMICS; SPECTROSCOPY; PERFORMANCE; MECHANISMS;

D O I：

10.1007/s40843-024-3090-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CdSe quantum-dot (QD) film, as the core function layer, plays a key role in various optoelectronic devices. The thickness uniformity of QD films is one of the key factors to determine the overall photoelectric performance. Therefore, it is important to obtain the thickness distribution of large-area QD films. However, it is difficult for traditional methods to quickly get the information related to its thickness distribution without introducing additional damage. In this paper, a non-contact and non-destructive inspection method for in-situ detecting the thickness uniformity of CdSe QD film is proposed. The principle behind this in-situ inspection method is that the photoluminescence quenching phenomenon of the QD film would occur under a high electric field, and the degree of photoluminescence quenching is related to the thickness of the quantum dot films. Photoluminescence images of the same QD film without and with an electric field are recorded by a charge-coupled device camera, respectively. By transforming the brightness distribution of these two images, we can intuitively see the thickness information of the thin film array of QD. The proposed method provides a meaningful inspection for the manufacture of QD based light-emitting display.

引用

页码：3570 / 3578

页数：9