Top-Contacted Organic Field-Effect Transistors with Graphene Electrodes Prepared by Laminate Transfer Method

被引：1

作者：

Suganuma, Koichi ^{[1
]}

Gotou, Takuya ^{[2
]}

Ueno, Keiji ^{[1
]}

机构：

[1] Saitama Univ, Grad Sch Sci & Engn, Dept Chem, Saitama 3388570, Japan

[2] Mitsubishi Gas Chem Co Inc, Tokyo Res Lab, Tokyo 1258601, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 12期

关键词：

THIN-FILM TRANSISTORS; LARGE-AREA; PATTERNED GRAPHENE; HIGH-PERFORMANCE; BOTTOM-CONTACT; GRAPHITE OXIDE; FABRICATION; CARBON;

D O I：

10.1143/APEX.5.125104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Top-contacted organic field-effect transistors (OFETs) with graphene electrodes were fabricated by the laminate transfer method. Graphene electrodes were prepared on a different glass substrate and transferred onto an organic semiconductor layer of poly(3-hexylthiophene) (P3HT) using a double-layer laminate film of polyacrylonitrile ( PAN) and poly( methyl methacrylate) ( PMMA). The fabricated top-contacted OFET with graphene electrodes covered by the polymer film showed good p-type transistor characteristics with hole mobility of (3.7 +/- 0.5) x 10(-2) cm(2) V-1 s(-1), and 92% of the mobility was maintained even after exposure to ambient air for 250 h. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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