Universal Dimensionality of Ferroelectric Domain Walls in Ultrathin Films

被引:0
作者
Kale, Somnath [1 ]
Petraru, Adrian [2 ]
Kohlstedt, Hermann [2 ]
Soni, Rohit [1 ]
机构
[1] Indian Inst Sci Educ & Res Berhampur, Dept Phys Sci, Berhampur 760010, India
[2] Univ Kiel, Inst Elect Engn & Informat Engn, Nanoelect, D-24143 Kiel, Germany
来源
ADVANCED PHYSICS RESEARCH | 2024年 / 3卷 / 08期
关键词
dimensionality; domain wall; ferroelectric; size effects; ultrathin films; PERCOLATION; DYNAMICS;
D O I
10.1002/apxr.202400014
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dimensionality of dynamic interfaces-domain walls (DWs) -is greatly influenced by symmetry and physical dimensions, irrespective of the microscopic details of the system. To address this fundamental question for the ferroelectric model system, the DW scaling criticality and dimensionality is investigated in ultrathin films of varied ferroelectric materials, compositions, and electrode-ferroelectric interfaces, grown on nominally flat and vicinal substrates. In spite of significant variations among ferroelectric systems, the observed prevalence of 1D DWs is consistent with a random bond disorder, elucidated through a scenario of 2D nucleation and growth-driven DW creep. These findings highlight the thickness size-dominated universal behavior of ferroelectric DWs, uncovering fascinating prospects for dimensionally engineered DW-based nanoelectronics. Investigating domain wall dynamics, statics, and dimensionality in ultrathin films across diverse ferroelectric materials, compositions, and interfaces, authors unveil the prevalence of 1D domain walls, showcasing a universal behavior dominated by thickness size when confronted with strain. This study elucidates 2D nucleation and growth-driven domain wall creep in the ultrathin regime, opening up captivating avenues for dimensionally engineered ferroelectric domain wall-based nanoelectronics. image
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页数:7
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