Tolerance of Corundum-Structured Tin-Doped Indium Oxide Thin Films to Gamma-ray Irradiation

被引：0

作者：

Shimazoe, Kazuki ^{[1
]}

Kurosawa, Shunsuke ^{[2
,3
,4
]}

Tanaka, Hiroki ^{[5
]}

Takata, Takushi ^{[5
]}

Nishinaka, Hiroyuki ^{[1
]}

机构：

[1] Kyoto Inst Technol, Fac Elect Engn & Elect, Sakyo Ku, Kyoto, Kyoto 6068585, Japan

[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Aoba Ku, Sendai, Miyagi 9808579, Japan

[3] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[4] Osaka Univ, Inst Laser Engn, Suita, Osaka 5650871, Japan

[5] Kyoto Univ, Inst Integrated Radiat & Nucl Sci, Kumatori Cho, Osaka 5900494, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2024年

基金：

日本科学技术振兴机构;

关键词：

corundum; gamma-ray; In2O3; Indium tin oxide; mist chemical vapor deposition; GROWTH;

D O I：

10.1002/pssb.202400368

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Corundum-structured Sn-doped indium oxide (rh-ITO) is investigated as a novel transparent conductive oxide. Herein, its gamma-ray tolerance up to a total dose of 77 kGy is examined for potential applications in harsh environments, such as space. The investigations are conducted on rh-ITO with Sn concentrations of 0 and 5 at%. X-ray diffraction 2 theta-omega scan analysis reveals that no phase separation occurs due to gamma-ray irradiation. The carrier concentration in undoped rh-In2O3 increases after irradiation, indicating that the gamma rays displace the oxygen atoms and form oxygen defects that generate donors. The high visible light transparency of rh-In2O3 and rh-ITO is maintained after irradiation. This study demonstrates the high stability of rh-ITO to gamma-ray irradiation until 77 kGy dose. This work contributes to the application of rh-ITO as an electrode in high-radiation environments.

引用

页数：5

共 29 条

[1] Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates
Akaiwa, Kazuaki
Kaneko, Kentaro
Ichino, Kunio
Fujita, Shizuo
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (12)
[2] Effects of high dose gamma irradiation on ITO thin film properties
Alyamani, A.
Mustapha, N.
[J]. THIN SOLID FILMS, 2016, 611 : 27 - 32
[3] Magnesium, nitrogen codoped Cr2O3: A p-type transparent conducting oxide
Arca, E.
Fleischer, K.
Shvets, I. V.
[J]. APPLIED PHYSICS LETTERS, 2011, 99 (11)
[4] Effect of Gamma Ray Irradiation on Epitaxial Pb(Zr,Ti)O3/SrRuO3 Tunable Varactor Devices
Barala, Surendra Singh
Banerjee, Nirupam
Kumar, Mahesh
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (08) : 4122 - 4128
[5] Formation of oxygen vacancies and Ti3+ state in TiO2 thin film and enhanced optical properties by air plasma treatment
Bharti, Bandna
Kumar, Santosh
Lee, Heung-No
Kumar, Rajesh
[J]. SCIENTIFIC REPORTS, 2016, 6
[6] ELECTRONIC BAND-STRUCTURE OF AL2O3, WITH COMPARISON TO AION AND AIN
FRENCH, RH
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (03) : 477 - 489
[7] Indium-oxide polymorphs from first principles: Quasiparticle electronic states
Fuchs, F.
Bechstedt, F.
[J]. PHYSICAL REVIEW B, 2008, 77 (15)
[8] γ irradiation induced effects on the TCO thin films
Kabacelik, Ismail
Kutaruk, Hakan
Yaltkaya, Serafettin
Sahin, Ramazan
[J]. RADIATION PHYSICS AND CHEMISTRY, 2017, 134 : 89 - 92
[9] Novel p-type oxides with corundum structure for gallium oxide electronics
Kaneko, Kentaro
Fujita, Shizuo
[J]. JOURNAL OF MATERIALS RESEARCH, 2022, 37 (03) : 651 - 659
[10] Growth and metal-oxide-semiconductor field-effect transistors of corundum-structured alpha indium oxide semiconductors
Kaneko, Kentaro
Ito, Yoshito
Uchida, Takayuki
Fujita, Shizuo
[J]. APPLIED PHYSICS EXPRESS, 2015, 8 (09)

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