Modeling Two-Dimensional Material-Based Photodetectors with Finite-Difference Methods

被引:0
作者
Islam, Raonaqul [1 ]
Simsek, Ergun [1 ]
机构
[1] Univ Maryland Baltimore Cty, Dept Comp Sci & Elect Engn, Baltimore, MD 21228 USA
来源
2024 INTERNATIONAL APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY SYMPOSIUM, ACES 2024 | 2024年
关键词
drift-diffusion; photodetector; two-dimensional materials;
D O I
暂无
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
We developed a finite-difference frequency-domain (FDFD) and a finite-difference time-domain (FDTD) drift-diffusion equations solver that takes the multilayered background into account for realistic characterization. Comparisons between the numerical results and experiments validate the accuracy of the proposed approach in calculating the output current, quantum efficiency, and phase noise of the photodetector as a function of incident wavelength.
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页数:2
相关论文
共 7 条
[1]  
Lopez-Sanchez O, 2013, NAT NANOTECHNOL, V8, P497, DOI [10.1038/NNANO.2013.100, 10.1038/nnano.2013.100]
[2]   Complex electrical permittivity of the monolayer molybdenum disulfide (MoS2) in near UV and visible [J].
Mukherjee, Bablu ;
Tseng, Frank ;
Gunlycke, Daniel ;
Amara, Kiran Kumar ;
Eda, Goki ;
Simsek, Ergun .
OPTICAL MATERIALS EXPRESS, 2015, 5 (02) :447-455
[3]   Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure [J].
Pak, Jinsu ;
Lee, Ilmin ;
Cho, Kyungjune ;
Kim, Jae-Keun ;
Jeong, Hyunhak ;
Hwang, Wang-Taek ;
Ahn, Geun Ho ;
Kang, Keehoon ;
Yu, Woo Jong ;
Javey, Ali ;
Chung, Seungjun ;
Lee, Takhee .
ACS NANO, 2019, 13 (08) :9638-9646
[4]   Fast Evaluation of RF Power Spectrum of Photodetectors With Windowing Functions [J].
Simsek, Ergun ;
Anjum, Ishraq Md ;
Carruthers, Thomas F. ;
Menyuk, Curtis R. ;
Campbell, Joe C. ;
Tulchinsky, David A. ;
Williams, Keith J. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (07) :3643-3648
[5]   High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS2 [J].
Smithe, Kirby K. H. ;
English, Chris D. ;
Suryavanshi, Saurabh V. ;
Pop, Eric .
NANO LETTERS, 2018, 18 (07) :4516-4522
[6]   Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide ransistors [J].
Ueda, Akiko ;
Zhang, Yijin ;
Sano, Nobuyuki ;
Imamura, Hiroshi ;
Iwasa, Yoshihiro .
NPJ COMPUTATIONAL MATERIALS, 2020, 6 (01)
[7]   Fast response photogating in monolayer MoS2 phototransistors [J].
Vaquero, Daniel ;
Clerico, Vito ;
Salvador-Sanchez, Juan ;
Diaz, Elena ;
Dominguez-Adame, Francisco ;
Chico, Leonor ;
Meziani, Yahya M. ;
Diez, Enrique ;
Quereda, Jorge .
NANOSCALE, 2021, 13 (38) :16156-16163