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Enhancement mechanism of copper ions doped TiO2 2 substrates based on surface-enhanced raman scattering
被引:1
|作者:
Liu, Hongye
[1
]
Teng, Ruonan
[1
]
Zhang, Siying
[1
]
Zhao, Bing
[1
]
Ruan, Weidong
[1
]
He, Dong
[2
]
Jung, Young Mee
[3
]
机构:
[1] Jilin Univ, Inst Theoret Chem, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China
[2] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
[3] Kangwon Natl Univ, Inst Mol Sci & Fus Technol, Dept Chem, Chunchon 24341, South Korea
关键词:
Cu-TiO2;
Surface-enhanced Raman scattering;
Charge transfer;
SERS substrates;
SERS;
SEMICONDUCTOR;
NANOFIBERS;
RESONANCE;
DFT;
ZN;
D O I:
10.1016/j.colsurfa.2024.135152
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Surface-enhanced Raman scattering (SERS) is considered as one of the most attractive analytical tools, and it is necessary to develop more semiconductor substrates. Herein, copper ions-doped TiO2 2 (Cu-TiO2) 2 ) nanoparticles (NPs) with different doping ratios were synthesized by a sol-hydrothermal method and used as semiconductor SERS substrates to explore the possible enhancement mechanisms. The synthesized Cu-TiO2 2 NPs show a cubic crystalline structure of anatase with a small particle size at 8 nm. We discussed the SERS enhancement ability of Cu-TiO2 2 substrates using crystal violet (CV) used as a probe. It can be found that there is a charge transfer (CT) effect between CV molecules and Cu-TiO2 2 substrates. In addition, Cu-TiO2 2 substrates exhibit the most SERS enhancement with an enhancement factor (EF) EF ) up to 2.4 x 104 4 at the Cu2+ 2 + doping ratio of 3 %, with a detection limit of 5 x 10-7 -7 M. The experiments demonstrated that Cu-TiO2 2 NPs can be used as SERS substrates because of the CT route among the valence band, the surface state energy level, and the lowest unoccupied molecular orbital, which facilitates the development of semiconductor SERS substrates and provides a new perspective in exploring SERS enhancement mechanisms.
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页数:8
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