Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

被引：47

作者：

Chen, J. C. H. ^{[1
]}

Wang, D. Q. ^{[1
]}

Klochan, O. ^{[1
]}

Micolich, A. P. ^{[1
]}

Das Gupta, K. ^{[2
]}

Sfigakis, F. ^{[2
]}

Ritchie, D. A. ^{[2
]}

Reuter, D. ^{[3
]}

Wieck, A. D. ^{[3
]}

Hamilton, A. R. ^{[1
]}

机构：

[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[3] Ruhr Univ Bochum, Angew Festkorperphys, D-44780 Bochum, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 05期

基金：

澳大利亚研究理事会; 英国工程与自然科学研究理事会;

关键词：

2-DIMENSIONAL ELECTRON; GASES;

D O I：

10.1063/1.3673837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are, instead, induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional electrons (mu(peak) - 4 x 10(6) cm(2)/Vs) and holes (mu(peak) - 0.8 x 10(6) cm(2)/Vs) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3673837]

引用

页数：3

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