GLAD synthesized Ga2O3 nanowire-based photodiode

Ga2O3 nanowire arrays were fabricated on silicon substrates using a combination of e-beam evaporation and glancing angle deposition (GLAD). Microscopic imaging and energy dispersive X-ray (EDX) mapping confirmed the formation of nanowire-like structures with precise stoichiometry. X-ray diffraction verified the crystalline beta-Ga2O3 structure. Optical bandgap values of 3.2 eV and 4.5 eV were determined through UV-Vis absorption spectroscopy utilizing Tauc's plot. The optoelectronic properties of an Au/Ga2O3 nanowire/p-Si/In device were assessed via current-voltage (I-V) measurements, with a free carrier concentration (N-d) of 5.6 x 10(17) cm(- 3) obtained from capacitance-voltage (C-V) measurements. Temperature-dependent I-V characteristics revealed a decrease in Ideality factor and series resistance with increasing temperature, along with an increase in barrier height, indicating barrier inhomogeneities. Wavelength-dependent responsivity and detectivity measurements demonstrated enhanced performance in the UV (similar to 300 nm) and near-UV (similar to 400 nm) regions. In the UV region, the device exhibited responsivity values of 2.29 A/W and 6.54 A/W, and detectivity values of 2.51 x 10(9) Jones and 8.64 x 10(9) Jones, respectively.