Numerical performance analysis of In0.2Ga0.8N/p-Si based solar cell using PC1D simulation on influence of region thicknesses, doping concentration and temperature towards power conversion efficiency (PCE)

In this study, the indium gallium nitride (InGaN) with silicon (Si) p-n junction solar cells were optimized to achieve the highest conversion efficiency using PC1D numerical analysis software. Physical models such as Auger recombination with Fermi-Dirac statistics, Shockley-Read-Hall recombination, and the bandgap narrowing effect were used to simulate and analyses the device. The paper focuses on optimizing technological and geometrical aspects such as layer thickness, doping concentration, and temperature to investigate their impact on the structure's conversion efficiency. A short circuit current density (J(sc)) of 34.9 mA/cm(2), an open circuit voltage (V-oc) of 0.7242 V, maximum power output (P-max) of 0.2137 W, fill factor of 84.55% are obtained under AM1.5G spectrum, exhibiting a maximum power conversion efficiency of 21.37% with low indium composition (x = 0.2). Additional parameters such as the current-voltage (I-V) characteristic, power-voltage (P-V) characteristic, and external quantum efficiency (EQE) are computed and plotted to achieve the optimal solar cell design.