Modifications of some physical properties of nanostructured indium doped Co3O4 3 O 4 thin films

Using the chemical spray pyrolysis (CSP) technique, nanostructured undoped and Co3O4:In thin films are deposited. The effect of indium doping content in Cobalt ranged from 1% to 3% on optical, structural, and topographical properties of Co3O4 nanostructured thin films. No new peaks belonging to the In phase were seen, according to X-ray diffraction research, which revealed that pure and Co3O4: In thin films are polycrystalline in and cubic phase with (111), (311), (400), and (511) preferable orientation for all filmsThe Scherrer formula computation of average crystallite size shows that the size of Nano crystallites grows when doping is enhanced. AFM micrographs demonstrated how the surface shape of the films was discovered to be influenced by the inclusion of indium in the Co3O4 location.SEM images of Undoped Co3O4 and Co3O4:In films (CSP technique), showing separate semi-spherical blocks (120-200 nm) of nanoparticles (<30 nm). Band gap values for pure and doped were 2.52 to 2.38 eV.Resistance increases with increases Indium-doping, indicating more charge carriers and potential surface roughness influence. Sensitivity decreases with higher Indium concentrations, attributing to enhanced crystallinity and nano-crystalline size.