The doping of transition metals can effectively modulate the electronic structures and enhance the photocatalytic activity of MXenes. The electronic and photocatalytic properties, as well as the quantum capacitance of Sc2CO2-Y under biaxial strain, were studied by density functional theory. Sc2CO2-Y is a direct semiconductor and keeps its semiconductor character under strain. Sc2CO2-Y under tensile strain has higher photocatalytic activity than under compressive strain. In particular, Sc2CO2-Y at 2% strain has the slowest recombination rate of electrons and holes because of the largest m(h)*/m(e)*. Sc2CO2-Y under strain is a potential cathode material. Its large potential keeps the character of cathode materials for Sc2CO2-Y under strain. Sc2CO2-Y under tensile strain has better conductivity, especially under 5% strain, due to having the largest Re (epsilon(0)). Sc2CO2-Y under strain can perform the HER, but fails to perform the OER at pH = 0, and tensile strain increases the reduction capacity of Sc2CO2-Y. Under strains from -2% to 2%, Sc2CO2-Y can perform the OER in an alkaline environment. Sc2CO2-Y is a good CO2 photocatalyst in acidic environments; the increase of pH value weakens the N-2 reducing capacity of Sc2CO2-Y under strain. Its work function, charge transfer and optical properties are also explored.
机构:
Hebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Hebei Normal Univ, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R ChinaHebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Guo, Nini
Zhu, Xiangfei
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Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R ChinaHebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Zhu, Xiangfei
Lian, Huijie
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Hebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Hebei Normal Univ, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R ChinaHebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Lian, Huijie
Guo, Tianxia
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Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R ChinaHebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Guo, Tianxia
Wang, Zijin
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Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R ChinaHebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Wang, Zijin
Zhang, Huiyang
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Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R ChinaHebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Zhang, Huiyang
Yao, Xiaojing
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Hebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Hebei Normal Univ, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R ChinaHebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Yao, Xiaojing
Wang, Bing
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Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Joint Ctr Theoret Phys JCTC, Kaifeng 475004, Peoples R ChinaHebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Wang, Bing
Zhang, Xiuyun
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Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R ChinaHebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China