Bi-Directional Modification to Quench Detrimental Redox Reactions and Minimize Interfacial Energy Offset for NiOX/Perovskite-Based Solar Cells

被引:8
作者
Das Adhikari, Ramkrishna [1 ]
Baishya, Himangshu [1 ]
Patel, Mayur Jagdishbhai [2 ]
Yadav, Deepak [2 ]
Iyer, Parameswar Krishnan [1 ,2 ]
机构
[1] Indian Inst Technol Guwahati, Ctr Nanotechnol, Kamrup 781039, Assam, India
[2] Indian Inst Technol Guwahati, Dept Chem, Gauhati 781039, Assam, India
关键词
bifacial modification; buried interfacial defects; inverted perovskite solar cells; nickel oxide; redox reaction; thermal stability; HOLE-TRANSPORT LAYER; HALIDE PEROVSKITES; EFFICIENT; CRYSTALLIZATION; IMPACTS; NIOX;
D O I
10.1002/smll.202404588
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The quality of the buried heterojunction of nickel oxide (NiOX)/perovskite is crucial for efficient charge carrier extraction and minimizing interfacial non-radiative recombination in inverted perovskite solar cells (PSCs). However, NiOX has limitations as a hole transport layer (HTL) due to energy level mismatch, low conduction, and undesirable redox reactions with the perovskite layer, which impede power conversion efficiency (PCE) and long-term stability. In this study, para-amino 2,3,5,6-tetrafluorobenzoic acid (PATFBA) is proposed as a bifacial defect passivator to tailor the NiOX/perovskite interface. The acid group and adjacent fluorine atoms of PATFBA effectively passivate NiOX surface defects, thereby improving its Ni3+/Ni2+ ratio, hole extraction capability, and energy band alignment with perovskite, while also providing active sites for homogenous nucleation. Meanwhile, the amine and adjacent fluorine atomsstabilize the buried perovskite interface by passivating interfacial defects, resulting in higher crystalline perovskite films with supressed non-radaitive recombination. Furthermore, the PATFBA buffer layer prevents redox reactions between Ni3+ and perovskite.These synergistic bi-directional interactions lead to optimized inverted PSCs with a PCE of 20.51% compared to 16.89% for pristine devices and the unencapsulated PATFBA-modified devices exhibit outstanding thermal and long-term stability. This work provides a new engineering approach to buried interfaces through the synergy of functional groups.
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页数:13
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