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Focused solar annealing for block copolymer fast self-assembly
被引:2
|作者:
Hu, Xiao-Hua
[1
]
Zhang, Rui
[1
]
Zhang, Xiaohui
[2
]
Wu, Zhiyong
[1
]
Zhou, Jing
[1
]
Li, Weihua
[2
]
Xiong, Shisheng
[1
,3
]
机构:
[1] Fudan Univ, Sch Informat Sci & Technol, 220 Handan Rd, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Macromol Sci, 220 Handan Rd, Shanghai 200433, Peoples R China
[3] Zhangjiang Lab, 100 Haike Rd, Shanghai 201204, Peoples R China
来源:
基金:
中国国家自然科学基金;
关键词:
Block copolymer;
Fast self-assembly;
Focused solar annealing;
Contact hole shrinking;
Contact hole multiplication;
Carbon neutrality;
CARBON-DIOXIDE EMISSIONS;
THIN-FILMS;
MULTIPLICATION;
ENERGY;
CHINA;
LAYER;
D O I:
10.1016/j.heliyon.2024.e24016
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
Block copolymer (BCP) self-assembly has tremendous potential applications in next-generation nanolithography. It offers significant advantages, including high resolution and costeffectiveness, effectively overcoming the limitations associated with conventional optical lithography. In this work, we demonstrate a focused solar annealing (FSA) technique that is facile, eco-friendly, and energy-efficient for fast self-assembly of polystyrene-block-poly(methyl block-poly(methyl methacrylate) (PS-b-PMMA) b-PMMA) thin films. The FSA principle involves utilizing a common biconvex lens to converge incident solar radiation into a high-temperature spot, which is directly used to drive the microphase separation of PS-b-PMMA b-PMMA thin films. As a result, PS-b-PMMA b-PMMA undergoes self-assembly, forming ordered nanostructures in a vertical orientation at seconds timescales on silicon substrates with a neutral layer. In addition, the FSA technique can be employed for grafting neutral polymer brushes onto the silicon substrate. Furthermore, the FSA's compatibility with graphoepitaxy-directed self-assembly (DSA) of BCP is also demonstrated in the patterning of contact holes. The results of contact hole shrinking show that contact hole prepatterns of similar to 60.4 nm could be uniformly shrunk to similar to 20.5 nm DSA hole patterns with a hole open yield (HOY) of 100 %. For contact hole multiplication, doublet DSA holes were successfully generated on elliptical templates, revealing an average DSA hole size of similar to 21.3 nm. Most importantly, due to the direct use of solar energy, the FSA technique provides many significant advantages such as simplicity, environmental friendliness, solvent-free, low cost, and net-zero carbon emissions, and will open up a new direction for BCP lithography that is sustainable, pollution-free, and carbon-neutral.
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页数:15
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