Polyaniline impact on graphitic C3N4's structural and physicochemical properties for high stability energy storage systems: Practical and theoretical studies

被引:9
|
作者
Qasim, Khaled Faisal [1 ]
Abdelhamed, Samar [2 ]
Elaraby, Ahmed [3 ]
Mousa, Mahmoud Ahmed [4 ]
机构
[1] Suez Univ, Fac Sci, Chem Dept, Suez 43221, Egypt
[2] Benha Univ, Fac Engn Shobra, Basic Sci Dept, Banha, Egypt
[3] Egyptian Petr Res Inst, Cairo, Egypt
[4] Benha Univ, Fac Sci, Chem Dept, Banha 13511, Egypt
关键词
Conducting polymers; Dielectric; Graphitic carbon nitride; Composites; Supercapacitor; REDUCED GRAPHENE OXIDE; ELECTRODE MATERIAL; ASYMMETRIC SUPERCAPACITOR; PERFORMANCE; NANOCOMPOSITE; NANOPARTICLES; FABRICATION; COMPOSITES;
D O I
10.1016/j.jiec.2024.05.011
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Polyaniline (PANI), and graphitic C3N4 (GCU) have a significant research consideration owing to their properties. Accordingly, in the current study, PANI, GCU, and their composite (PANI@GCU) are synthesized through aniline chemical polymerization in the presence of C3N4. Materials characterizations are done using X-ray diffraction (XRD), Scanning electron microscopy (SEM), and Fourier transform infrared (FT-IR). SEM images demonstrate that the PANI layers cover the surface of the GCU. Samples are studied through dielectric and electrochemical analysis. The electrical conductivity value shows a conductivity increment in the order: PANI@GCU > PANI > GCU. The PANI@GCU composite sample exhibits a bulk conductivity of 23 S/m at 10 MHz frequency. It also has a 584 F/g specific capacitance with 96.7 % stability after 1000 cycles at 1 A/g. The results of PANI@GCU supercapcitance performance are supported with molecular modelling that shows the interaction between GCU and PANI through the elongation of C-N bond of PANI beside of GCU layer bending to create arc and arrow structure. The structure of PANI@GCU has a lower band gap (Delta E-gap) than PANI, and GCU separately which agrees with the enhancement of the conductivity of the composite than its constituent.
引用
收藏
页码:325 / 335
页数:11
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