Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors

This article utilizes low-frequency noise (LFN) measurements to evaluate the stability of tellurium (Te) field-effect transistor (FET). Our results show that LFN for Te FET on hexagonal boron nitride/silicon dioxide (h-BN/SiO2) tracks the trends of flicker noise (1/ f noise) and decreases with increasing overdrive voltages, which is ascribed to the change of dominant carriers and the fluctuation of surface trap density. Compared with Te FET on SiO2, Te FET on h-BN/SiO2 reaches a lower LFN. To further investigate the mechanism of current fluctuation, surface trap density ( N st ) is extracted. The average value of N st for Te FETs on h-BN/SiO2 is smaller than that for Te FETs on SiO2. It is concluded that the introduction of atomically flat h-BN dielectric decreases N-st, suggesting that Te FET on h-BN/SiO2 presents higher immunity to LFN and provides a design thought for devices with high stability in the future.