Review of Silicon Power Semiconductor Technologies for Power Supply on Chip and Power Supply in Package Applications

被引：56

作者：

Disney, Don ^{[1
]}

Shen, Z. John ^{[2
]}

机构：

[1] Avogy Inc, San Jose, CA 95134 USA

[2] IIT, Chicago, IL 60616 USA

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2013年 / 28卷 / 09期

关键词：

Power converters; power integrated circuits; power semiconductor devices; power transistors; system-in-a-package; system-on-a-chip; BCD TECHNOLOGY; ON-RESISTANCE; MOSFET; LDMOS; 7V;

D O I：

10.1109/TPEL.2013.2242095

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper provides an overview of the fundamental operating principles of power semiconductor devices and reviews the state-of-the-art power device technologies which are most relevant to the realization of power supply on chip and power supply in package solutions. Power switching devices are divided into four categories low-voltage discrete transistors, high-voltage discrete transistors, low-voltage power ICs, and high-voltage power ICs. Advantages and disadvantages of different device technologies are compared and analyzed. Future technology trends are discussed.

引用

页码：4168 / 4181

页数：14

共 56 条

[1]

Akiyama H, 2004, ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P375

[2] A Fully Integrated 660 MHz Low-Swing Energy-Recycling DC-DC Converter [J].

Alimadadi, Mehdi ;

Sheikhaei, Samad ;

Lemieux, Guy ;

Mirabbasi, Shahriar ;

Dunford, William G. ;

Palmer, Patrick R. .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2009, 24 (5-6) :1475-1485

[3]

Appels J. A., 1979, IEDM, P238, DOI DOI 10.1109/IEDM.1979.189589

[4]

Baliga B J., 1999, U.S. Patent, Patent No. [5 998 833, 5998833]

[5]

Darnell Group, 2011, DC DC CONV ICS POW S

[6] W-gated trench power MOSFET (WFET) [J].

Darwish, M ;

Yue, C ;

Lui, KH ;

Giles, F ;

Chan, B ;

Chen, KI ;

Pattanayak, D ;

Chen, Q ;

Terrill, K ;

Owyang, K .

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2004, 151 (03) :238-242

[7] Scaling issues in lateral power MOSFETs [J].

Darwish, M ;

Huang, J ;

Liu, MX ;

Shekar, MS ;

Williams, R ;

Cornell, M .

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, :329-332

[8] A new generation of high voltage MOSFETs breaks the limit line of silicon [J].

Deboy, G ;

März, M ;

Stengl, JP ;

Strack, H ;

Tihanyi, J ;

Weber, H .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :683-685

[9]

Disney D. R., 1993, THESIS STANFORD U ST

[10]

Disney D, 2008, INT SYM POW SEMICOND, P157

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