Progress in Semiconductor Saturable Absorption Mirror Mode-Locked Laser

被引：2
作者：
Huang Ting [1 ,2 ]
Lin Nan [1 ]
Zhang Qiuyue [1 ,2 ]
He Tianjiang [1 ,2 ]
Xiong Cong [1 ]
Zhong Li [1 ,2 ]
Liu Suping [1 ]
Ma Xiaoyu [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
来源：
LASER & OPTOELECTRONICS PROGRESS | 2024年 / 61卷 / 09期
关键词：
semiconductor saturable absorption mirror; passive mode-locking; laser; ultrafast laser; THIN-DISK LASER; SURFACE-EMITTING LASER; AVERAGE OUTPUT POWER; FIBER LASER; REPETITION-RATE; PULSE GENERATION; FEMTOSECOND PULSES; M NDYVO4; ND-YLF; ABSORBER;
D O I：
10.3788/LOP231330
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semiconductor saturable absorption mirror (SESAM) is the most commonly-used passive mode-locking device in ultrafast laser technology. Owing to its advantages of self-starting, low insertion loss, high integration, and flexible design, SESAM has a wide range of applications and excellent commercial prospects. This study introduces the mode-locking principle and current development status of SESAM and summarizes the current epitaxial structure, growth mode, and parameter performance of SESAM. It also provides a detailed description of its latest progress in mode-locking in solid-state, semiconductor, and fiber lasers. Moreover, the performance characteristics and future-development direction of various types of mode-locked lasers are presented.
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页数：13
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