Polycrystalline-Silicon CMOS Thin-Film Transistors With T-Shaped Gate and Lightly Doped Drain

被引：1

作者：

Lee, Cheng-Kuei ^{[1
]}

Chang, Hsun-Lin ^{[1
]}

Chen, Kun-Mung ^{[2
]}

Huang, Guo-Wei ^{[2
]}

Kuo, Chien-Nan ^{[1
]}

Li, Pei-Wen ^{[1
]}

Lin, Horng-Chih ^{[1
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ NYCU, Inst Elect, Hsinchu 30010, Taiwan

[2] Taiwan Semicond Res Inst TSRI, High Frequency Technol Div, Hsinchu 300091, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 09期

关键词：

Thin film transistors; Logic gates; Electric fields; Junctions; Silicon; Inverters; Fabrication; Lightly doped drain (LDD); poly-Si; system on panel; T-shaped gate; thin-film transistor (TFT); GAP-STATE DENSITY; POLY-SI; LEAKAGE CURRENT; PERFORMANCE; CONDUCTION; MECHANISM; DESIGN; TFTS;

D O I：

10.1109/TED.2024.3433833

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the implementation of both n-and p-channel polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with features of T-shaped gate (T-gate) of n(+) poly-Si in combination with lightly doped drain (LDD) structure. The inclusion of the T-gate and LDD structures improves both the on-state current (I-on) and off-state leakage (I-off) of n-channel TFTs significantly in comparison to the conventional TFTs. For p-channel poly-Si TFTs, the LDD structure mitigates I-off but leads to an I-on degradation due to a potential barrier at the source junction underneath the T-gate's wing. An additional boron channel doping not only improves I-on but also adjusts the threshold voltage of p-channel TFTs. Based on our proposed poly-Si TFTs, the fabricated T-gate devices demonstrate full-swing switching of CMOS inverters.

引用

页码：5414 / 5420

页数：7

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