Probing surface interactions in CdSe quantum dots with thiocyanate ligands

被引:1
|
作者
Deshmukh, Samadhan H. [1 ,3 ]
Yadav, Sushma [2 ]
Chowdhury, Tubai [1 ,3 ]
Pathania, Akhil [1 ,3 ]
Sapra, Sameer [2 ]
Bagchi, Sayan [1 ,3 ]
机构
[1] Natl Chem Lab CSIR NCL, Phys & Mat Chem Div, Dr Homi Bhabha Rd, Pune 411008, India
[2] Indian Inst Technol Delhi, Dept Chem, New Delhi 110016, India
[3] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
关键词
STRUCTURAL DYNAMICS; COLLOIDAL NANOCRYSTALS; THIN-FILMS; CHEMISTRY; SOLVENT; ENERGY;
D O I
10.1039/d4nr01507j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Surface chemistry dictates the optoelectronic properties of semiconductor quantum dots (QDs). Tailoring these properties relies on the meticulous selection of surface ligands for efficient passivation. While long-chain organic ligands boast a well-understood passivation mechanism, the intricacies of short inorganic ionic ligands remain largely unexplored. This study sheds light on the surface-passivation mechanism of short inorganic ligands, particularly focusing on SCN- ions on CdSe QDs. Employing steady-state and time-resolved infrared spectroscopic techniques, we elucidated the surface-ligand interactions and coordination modes of SCN--capped CdSe QDs. Comparative analysis with studies on CdS QDs unveils intriguing insights into the coordination behavior and passivation efficacy of SCN- ions on Cd2+ rich QD surfaces. Our results reveal the requirement of both surface-bound (strong binding) and weakly-interacting interfacial SCN- ions for effective CdSe QD passivation. Beyond fostering a deeper understanding of surface-ligand interactions and highlighting the importance of a comprehensive exploration of ligand chemistries, this study holds implications for optimizing QD performance across diverse applications. Our study explores quantum dots, specifically CdSe, using FTIR and 2D-IR spectroscopy. Findings reveal surface passivation of SCN- ions. Combined with computational calculations, these insights impact quantum dots' performance optimization.
引用
收藏
页码:14922 / 14931
页数:10
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