PROPERTIES OF ORIGINAL AND IRRADIATED PHOSPHIDE-GALLIUM LEDs

被引：0

作者：

Chumak, M. Ye. ^{[1
]}

Lytovchenko, P. G. ^{[2
]}

Petrenko, I., V ^{[2
]}

Stratilat, D. P. ^{[2
]}

Tartachnyk, V. P. ^{[2
]}

机构：

[1] Drahomanov Ukrainian State Univ, Kyiv, Ukraine

[2] Natl Acad Sci Ukraine, Inst Nucl Res, Kyiv, Ukraine

来源：

NUCLEAR PHYSICS AND ATOMIC ENERGY | 2024年 / 25卷 / 02期

关键词：

GaP; light emitting diodes; irradiation; spectral characteristics; current-voltage characteristics; electroluminescent characteristics;

D O I：

10.15407/jnpae2024.02.134

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

Spectral features of the original and irradiated with electrons with E = 2 MeV GaP light emitting diodes (LEDs) were studied. Recombination lines of the exciton bound on the N isoelectronic center and on the pair complexes NN1 1 were detected. The change in the spectral composition of radiation when passing through a section of negative differential resistance is analyzed. Dose dependences of luminescence intensity were obtained for green GaP(N) and red GaP(Zn-O) LEDs. The maximum critical radiation dose was established, after which the LEDs lost their characteristic exciton emission mechanism. The results of the annealing of irradiated LEDs are given.

引用

页码：134 / 140

页数：7

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