Role of phonon scattering and bonding in resolving lattice thermal conductivity ambiguities of β-Ga2O3

被引:1
作者
Srivastava, Ashutosh [1 ]
Mukherjee, Madhubanti [1 ]
Singh, Abhishek Kumar [1 ]
机构
[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, India
关键词
Bonding - Crystal lattices - Gallium compounds - Germanium compounds - Phonon scattering - Thermal conductivity of solids;
D O I
10.1039/d4dt02033b
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Understanding the lattice thermal conductivity (kappa(l)) of beta-Ga2O3 is very intriguing owing to its advantages in high-voltage and high-temperature applications. Despite several attempts, the underlying mechanism and causes of the notable discrepancies found in the kappa(l) values of beta-Ga2O3 along [100] and [001] directions calculated using first principles remained unresolved. We demonstrate that the understanding of the nature of chemical bonding is crucial to overcome the inconsistency in theoretically reported kappa(l) values. In low-symmetry structures such as beta-Ga2O3, the nature of the interactions is primarily long-range; therefore, a sufficiently large supercell inclusive of various bonding characteristics is required to capture relevant phonon wavelengths. Bonding nature-aware structure modeling allows precise estimation of acoustic and optical mode contributions towards kappa(l). Additionally, phonon mean free path analysis confirms that considering only third-order interaction terms is adequate to determine the kappa(l) of beta-Ga2O3. The calculated kappa(l) values are in excellent agreement with experimentally reported values in all three directions. Our results establish that the bonding nature and its influence on phonon scattering are essential to consider in calculating kappa(l) accurately.
引用
收藏
页码:16023 / 16029
页数:7
相关论文
共 41 条
[1]   Unusual elasticity of monoclinic β-Ga2O3 [J].
Adachi, K. ;
Ogi, H. ;
Takeuchi, N. ;
Nakamura, N. ;
Watanabe, H. ;
Ito, T. ;
Ozaki, Y. .
JOURNAL OF APPLIED PHYSICS, 2018, 124 (08)
[2]   POWER SEMICONDUCTOR-DEVICE FIGURE OF MERIT FOR HIGH-FREQUENCY APPLICATIONS [J].
BALIGA, BJ .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) :455-457
[3]   A SIMPLE MEASURE OF ELECTRON LOCALIZATION IN ATOMIC AND MOLECULAR-SYSTEMS [J].
BECKE, AD ;
EDGECOMBE, KE .
JOURNAL OF CHEMICAL PHYSICS, 1990, 92 (09) :5397-5403
[4]   IMPROVED TETRAHEDRON METHOD FOR BRILLOUIN-ZONE INTEGRATIONS [J].
BLOCHL, PE ;
JEPSEN, O ;
ANDERSEN, OK .
PHYSICAL REVIEW B, 1994, 49 (23) :16223-16233
[5]   Direct Solution to the Linearized Phonon Boltzmann Equation [J].
Chaput, Laurent .
PHYSICAL REVIEW LETTERS, 2013, 110 (26)
[6]   Anomalous Temperature-Dependent Phonon Anharmonicity and Strain Engineering of Thermal Conductivity in β-Ga2O3 [J].
Chen, Ying ;
Peng, Lei ;
Wu, Yu ;
Ma, Congcong ;
Wu, Ao ;
Zhang, Hao ;
Fang, Zhilai .
JOURNAL OF PHYSICAL CHEMISTRY C, 2023, 127 (27) :13356-13363
[7]   CRYSTAL ORBITAL HAMILTON POPULATIONS (COHP) - ENERGY-RESOLVED VISUALIZATION OF CHEMICAL BONDING IN SOLIDS BASED ON DENSITY-FUNCTIONAL CALCULATIONS [J].
DRONSKOWSKI, R ;
BLOCHL, PE .
JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (33) :8617-8624
[8]   Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids [J].
Feng, Tianli ;
Lindsay, Lucas ;
Ruan, Xiulin .
PHYSICAL REVIEW B, 2017, 96 (16)
[9]   On the bulk β-Ga2O3 single crystals grown by the Czochralski method [J].
Galazka, Zbigniew ;
Irmscher, Klaus ;
Uecker, Reinhard ;
Bertram, Rainer ;
Pietsch, Mike ;
Kwasniewski, Albert ;
Naumann, Martin ;
Schulz, Tobias ;
Schewski, Robert ;
Klimm, Detlef ;
Bickermann, Matthias .
JOURNAL OF CRYSTAL GROWTH, 2014, 404 :184-191
[10]   CRYSTAL STRUCTURE OF BETA-GA2O3 [J].
GELLER, S .
JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (03) :676-684