Strong doping reduction on wafer-scale CVD graphene devices via Al2O3 ALD encapsulation

被引：1

作者：

Dockx, K. ^{[1
,2
]}

Barnes, M. D. ^{[1
]}

Wehenkel, D. J. ^{[1
]}

van Rijn, R. ^{[1
]}

van der Zant, H. S. J. ^{[2
]}

Buscema, M. ^{[1
]}

机构：

[1] Appl Nanolayers BV, Feldmannweg 17, NL-2628 CT Delft, Netherlands

[2] Delft Univ Technol, Kavli Inst Nanosci, Lorentzweg 1, NL-2628 CJ Delft, Netherlands

来源：

NANOTECHNOLOGY | 2024年 / 35卷 / 39期

关键词：

graphene; atomic layer deposition; electronics; FIELD-EFFECT TRANSISTORS; STATISTICAL-ANALYSIS;

D O I：

10.1088/1361-6528/ad5dbb

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present the electrical characterization of wafer-scale graphene devices fabricated with an industrially-relevant, contact-first integration scheme combined with Al2O3 encapsulation via atomic layer deposition. All the devices show a statistically significant reduction in the Dirac point position, V-cnp, from around +47 V to between -5 and 5 V (on 285 nm SiO2), while maintaining the mobility values. The data and methods presented are relevant for further integration of graphene devices, specifically sensors, at the back-end-of-line of a standard CMOS flow.

引用

页数：8

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