Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution-Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability

被引：0

作者：

Eun, Jun-Su ^{[1
]}

Lee, Jinuk ^{[1
]}

Na, Jeong-Hyeon ^{[1
]}

Park, Jun-Hyeong ^{[1
]}

Park, Won ^{[1
]}

Feng, Junhao ^{[1
]}

Seo, Kyung-Ho ^{[1
]}

Jang, Jaewon ^{[1
]}

Kang, In Man ^{[1
]}

Kim, Do-Kyung ^{[2
]}

Bae, Jin-Hyuk ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect & Elect Engn, 80 Daehak Ro, Daegu 702701, South Korea

[2] LG Display, Paju 10845, South Korea

来源：

ADVANCED ELECTRONIC MATERIALS | 2025年 / 11卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

bilayer structure; charge transport characteristics; oxide semiconductors; positive bias stability; semiconductor thickness control; thin-film transistors; ACTIVE-LAYER;

D O I：

10.1002/aelm.202400328

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Metal-oxide thin-film transistors (TFTs) have garnered much attention because of their advantages such as high transparency, low leakage current, and low processing temperature. However, there is a need to continuously improve their mobility and bias stability for application to next-generation advanced electronics. In this study, the thickness of bilayer semiconductors is finely controlled to enhance the charge transport characteristics and bias stability in solution-processed heterojunction oxide TFTs. The thicknesses of the top and bottom layers in the bilayer are individually adjusted by controlling solution molarity. The introduction of a bilayer channel improved the electrical performance of oxide TFTs via effective charge transport. However, trap-limited conduction becomes dominant in the bilayer with an excessively thick top layer, thereby leading to a significant reduction in mobility and positive bias stability. Meanwhile, although increasing the bottom layer thickness contributes to improved mobility and reliability, it causes a serious negative shift in threshold voltage (VTH). TFTs with an optimized bilayer structure show high mobility at a VTH close to 0 V and have particularly excellent positive bias stress stability. This study on bilayer channel thickness will be beneficial for developing advanced transistors with optimized bilayer or multilayer channels. Bilayer-channel oxide TFTs are fabricated. The top and bottom active layer characteristics are designed by controlling the semiconductor thickness. Top active layer characteristics affect electron transport and stability in bilayer-channel TFTs. An optimized heterostructure channel leads to effective electron transport and outstanding bias stability. image

引用

页数：8