Unraveling Stacking Transitions in Twisted Bilayer Graphene: Insights From Intralayer and Interlayer Processes

In this paper, we investigate a twisted bilayer graphene on an h-BN substrate. The graphene is grown using high-quality chemical vapor deposition (CVD) and subsequently transferred onto the h-BN substrate. Our focus is on the stacking transition within the bilayer system, based on fluctuations in both intralayer and interlayer processes. Our findings reveal that post-annealing induces alterations in the electron-phonon interaction, corresponding to the spatially dependent stacking changes in the bilayer structure. This makes it possible to modify the electronic band structure of graphene and subsequently all its optoelectronic properties. This study explores the stacking transitions in twisted bilayer graphene on an h-BN substrate using Raman spectroscopy. By analyzing intralayer and interlayer processes, we demonstrate how postannealing can modulate electron-phonon interactions. These findings reveal spatially dependent changes in the stacking, offering pathways to modify the electronic band structure and optoelectronic properties of graphene.image