Radio frequency magnetron sputtering growth of Ni-doped ZnO thin films with nanocolumnar structures

被引：2
|
作者：
Mazwan, M. [1 ]
Ng, S. S. [1 ]
Baharin, M. S. N. Samsol [1 ]
Pakhuruddin, M. Z. [1 ,2 ]
Abu Bakar, A. S. [3 ]
Rahman, M. N. Abd.
Al-Zuhairi, O. [3 ]
Abd Rahim, A. F. [4 ]
机构：
[1] Univ Sains Malaysia, Inst Nano Optoelect Res & Technol INOR, Permatang Pauh 11800, Penang, Malaysia
[2] Univ Sains Malaysia, Sch Phys, Permatang Pauh 11800, Penang, Malaysia
[3] Univ Malaya, Fac Sci, Low Dimens Mat Res Ctr, Dept Phys, Kuala Lumpur 50603, Malaysia
[4] Univ Teknol MARA, Fac Elect Engn, Cawangan Pulau Pinang, Permatang Pauh 13500, Penang, Malaysia
来源：
JOURNAL OF CRYSTAL GROWTH | 2024年 / 644卷
关键词：
Nanocolumnar; Nickel seed layer; Catalyst; Magnetron sputtering; Dopant;
D O I：
10.1016/j.jcrysgro.2024.127835
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
This study describes the RF magnetron sputtering growth of nickel (Ni) doped zinc oxide (ZnO) thin films with nanocolumns (NCs) structures. Using a nickel seed layer, homogeneous and vertically aligned ZnO nanocolumns with a diameter of around 30 nm were successfully grown. The X-ray diffraction (XRD) results confirmed the incorporation of Ni atoms into the ZnO lattice, producing single crystalline structures without secondary phases. High-resolution transmission electron microscopy showed clear lattice planes with a d-spacing value of 3.243 & Aring; corresponding to the wurtzite phase of ZnO. Optimal crystalline quality was achieved by growing the films at 300 degrees C followed by thermal annealing at 300-500 degrees C in an oxygen ambient.
引用
收藏
页数：12
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