Ultrahigh growth rate-induced thick 3C-SiC heteroepitaxial layers on 4H-SiC and its oxidation characteristics

The cubic 3C-SiC displays unique advantages in power electronics applications due to its high channel mobility and low SiO2/3C-SiC 2 /3C-SiC interface state density. Therefore, the epitaxial growth technology of 3C-SiC is one of the core technologies for preparing high-performance SiC power devices. In this work, we choose 4H-SiC as substrates to grow 3C-SiC with methyltrichlorosilane (MTS)-H2 2 complex precursor and acheieved an ultrahigh epitaxial growth rate up to 278 mu m/h. Then the oxidation treatment has been conducted. The elemental composition, surface morphology, and crystalline phase of the prepared 3C-SiC/4H-SiC thick films were comprehensively characterized with SEM, Raman, XRD and TEM techniques. The growth mechanism and oxidation characteristics of the 3C-SiC/4H-SiC heteroepitaxial layers were analyzed based on experimental phenomena.