Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes

被引：0

作者：

Li, Jian-Sian ^{[1
]}

Chiang, Chao-Ching ^{[1
]}

Wan, Hsiao-Hsuan ^{[1
]}

Stepanoff, Sergei P. ^{[2
]}

Ren, Fan ^{[1
]}

Haque, Aman ^{[4
]}

Wolfe, Douglas ^{[2
,3
,5
,6
]}

Pearton, S. J. ^{[7
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Penn State Univ, Mat Sci & Engn Dept, University Pk, PA 16802 USA

[3] Penn State Univ, Appl Res Lab, University Pk, PA 16802 USA

[4] Penn State Univ, Dept Mech Engn, University Pk, PA 16802 USA

[5] Penn State Univ, Engn Sci & Mech Dept, University Pk, PA 16802 USA

[6] Penn State Univ, Ken & Mary Alice Lindquist Nucl Engn Dept, University Pk, PA 16802 USA

[7] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32603 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2024年 / 42卷 / 05期

关键词：

DISPLACEMENT DAMAGE; RADIATION DETECTOR; DIFFUSION LENGTH; IRRADIATION; MOTION;

D O I：

10.1116/6.0003819

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Co-60 gamma irradiation of SiC merged-PiN Schottky (MPS) diodes up to fluences of 1 Mrad (Si) produces increases in both forward and reverse current, with less damage when the devices are biased during irradiation. Subsequent injection of minority carriers by forward biasing at 300 K can partially produce some damage recovery, but at high forward biases also can lead to further degradation of the devices, even in the absence of radiation damage. Recombination-enhanced annealing by carrier injection overall is not an effective technique for recovering gamma-induced damage in SiC MPS diodes, especially when compared to other near athermal methods like electron wind force annealing.

引用

页数：8

共 42 条

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