Packaged Millimeter-Wave On-Chip Bandpass Filter Using SHMSIW and Microstrip Hybrid Structure in 0.25-μm GaAs pHEMT Technology

被引：1

作者：

Zhou, Xin ^{[1
,2
]}

Zhang, Gang ^{[1
,3
]}

Tam, Kam-Weng ^{[3
]}

Chen, Shichang ^{[4
]}

Zhang, Zhuowei ^{[1
,2
]}

Fu, Xiaodong ^{[5
]}

机构：

[1] Univ Macau, Fac Sci & Technol, Dept Elect & Comp Engn, Macau, Peoples R China

[2] Nanjing Normal Univ, Sch Elect & Automat Engn, Nanjing 210046, Peoples R China

[3] Nanjing Normal Univ, Sch Elect & Automation Engn, Jiangsu Key Lab 3 D Printing Equipment & Mfg, Nanjing 210046, Peoples R China

[4] Hangzhou Dianzi Univ, Coll Elect & Informat, Key Lab RF Circuit & Syst, Minist Educ, Hangzhou 310018, Peoples R China

[5] Zhongtian Commun Technol Co Ltd, Nantong 226000, Peoples R China

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2024年 / 14卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Band-pass filters; Gallium arsenide; Resonators; System-on-chip; Metals; PHEMTs; Filters; Bandpass filter (BPF); GaAs technology; hybrid structure; on-chip; substrate integrated waveguide (SIW); transmission zero (TZ); GUIDE; SIW;

D O I：

10.1109/TCPMT.2024.3409434

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, a new 45-GHz millimeter-wave (mm-wave) on-chip bandpass filter (BPF) for IEEE 802.11aj standard application is presented. The BPF is designed using a hybrid structure of shield half-mode substrate integrated waveguide (SHMSIW) and microstrip in 0.25- $\mu $ m gallium arsenide (GaAs) pHEMT technology. First, a second-order SHMSIW on-chip BPF is developed. The metal layer forms electric walls when connected to discrete vias, whereas it forms magnetic walls when they are not connected. Ulteriorly, to enhance frequency selectivity, two coupled microstrip resonators are embed into the coupling window of the two coupled SHMSIW cavities. The cross couplings between these hybrid resonators introduce two transmission zeros (TZs), achieving high-frequency selectivity without increasing the original circuit size. For verification, a quasi-elliptic on-chip BPF prototype is designed, fabricated, and measured. The measured results show good consistency with the simulated ones.

引用

页码：1454 / 1460

页数：7