Study on photoelectric properties of manganese-doped MoS2 thin films

被引：0

作者：

Sun, Zijian ^{[1
]}

Cai, Weiqiang ^{[1
]}

Xu, Jiaying ^{[1
]}

Ma, Xiying ^{[1
]}

Zhang, Xiaoyu ^{[1
]}

机构：

[1] Suzhou Univ Sci & Technol, Phys Sci & Technol Coll, Gaoxin Sect, Kerui Rd 1, Suzhou 215009, Jiangsu, Peoples R China

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2025年 / 39卷 / 12期

基金：

中国国家自然科学基金;

关键词：

MoS2; film; chemical vapor deposition; photoelectric properties; TRANSPORT-PROPERTIES; STOICHIOMETRY;

D O I：

10.1142/S0217979225500870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper investigates the microstructure, morphology and optical properties of manganese (Mn)-doped molybdenum disulfide (MoS2) films with a triangular shape fabricated by the chemical vapor deposition method. X-ray diffraction and X-ray photoelectron spectroscopy show that the Mn element is successfully doped into MoS2 film. Mn doping results in a shift in the absorption spectrum because of the changes in the band structure of the doped films. I-V curves indicate about a 50% reduction in the photocurrent onset voltage for the Mn-MoS2 film under different light intensities. The results demonstrate that Mn doping improves the electronic structure of MoS2 film, which is of significant importance for applications in optoelectronic sensing and photocatalysis.

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页数：11

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