Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: unveiling distinct resistance states and enhanced performance for phase change random access memory

This study investigates the phase-change properties of [Ge8Sb92 (25 nm)-Ge2Sb2Te5 (25 nm)](1) multilayer thin films, elucidating three distinct resistance states originating from two structural transitions: initial Sb precipitation and Ge2Sb2Te5-FCC crystallization, followed by Ge2Sb2Te5-FCC to Ge2Sb2Te5-HEX transformation with additional Sb precipitation. The phase transitions induce two abrupt changes in resistance at temperatures of 169.8 degrees C and 197.7 degrees C, respectively, with corresponding data retention temperatures of 97 degrees C and 129 degrees C, indicating robust thermal stability. The [Ge8Sb92 (25 nm)-Ge2Sb2Te5 (25 nm)](1)-based phase change random access memory (PCRAM) device demonstrates reversible switching characteristics and multi-level storage capabilities within 20 ns, showcasing enhanced phase-change speed and storage density. In summary, [Ge8Sb92(25 nm)-Ge2Sb2Te5(25 nm)](1) demonstrates enhanced thermal stability, swift phase transition, and increased storage density relative to conventional Ge2Sb2Te5, establishing it as a promising new phase-change material for PCRAM applications.