Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

被引：10

作者：

Jeong, Seong-Jun ^{[2
]}

Kim, Doo-In ^{[1
]}

Kim, Sang Ouk ^{[2
]}

Han, Tae Hee ^{[2
]}

Kwon, Jung-Dae ^{[3
]}

Park, Jin-Seong ^{[4
]}

Kwon, Se-Hun ^{[1
]}

机构：

[1] Pusan Natl Univ, Natl Core Res Ctr Hybrid Mat Solut, Pusan 609735, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[3] Korea Inst Mat Sci, Ctr Convergence Mat & Technol, Chang Won 641010, South Korea

[4] Dankook Univ, Dept Mat Sci & Engn, Cheonan 330714, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 01期

关键词：

Plasma-Enhanced Atomic Layer Deposition; Oxygen Diffusion Barrier; Ruthenium-Titanium Nitride; FRAM; DRAM; ELECTRICAL-PROPERTIES; STABILITY;

D O I：

10.1166/jnn.2011.3222

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ru-TiN thin films were prepared from bis(ethylcyclopentadienyl)ruthenium and tetrakis(dimethylamino)titanium using plasma-enhanced atomic layer deposition (PEALD). The Ru and TiN were deposited sequentially to intermix TiN with Ru. The composition of Ru-TiN films was controlled precisely by changing the number of deposition cycles allocated to Ru, while fixing the number of deposition cycles allocated to TiN. Although both Ru and TIN thin films have a polycrystalline structure, the microstructure of the Ru-TiN films changed from a TiN-like polycrystalline structure to a nanocrystalline on increasing the Ru intermixing ratio. Moreover, the electrical resistivity of the Ru-0.67-TiN0.33 thin films is sufficiently low at 190 mu Omega.cm and was maintained even after O-2 annealing at 750 degrees C. Therefore, Ru-TiN thin films can be utilized as a oxygen diffusion barrier material for future dynamic (DRAM) and ferroelectric (FeRAM) random access memory capacitors.

引用

页码：671 / 674

页数：4

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