Stable novel silicon allotropes in space group P2/m with various band gap structures by high-throughput screening

被引:2
作者
Lin, Zehao [1 ]
Fan, Qingyang [2 ]
Pang, Qing [1 ]
Gao, Dangli [1 ]
Yun, Sining [3 ]
机构
[1] Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Peoples R China
[2] Xian Univ Architecture & Technol, Coll Informat & Control Engn, Xian 710055, Peoples R China
[3] Xian Univ Architecture & Technol, Sch Mat Sci & Engn, Funct Mat Lab FML, Xian 710055, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
High-throughput calculations; Silicon allotropes; Electronic properties; Photovoltaic applications; P2/m space group; TOTAL-ENERGY CALCULATIONS;
D O I
10.1016/j.commatsci.2024.113302
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon is the fundamental material for the semiconductor and microelectronics industries, but controlling the electronic band gap structure of diamond-type silicon remains a huge challenge to adapt to growing applications. Here, we have predicated 23 new silicon allotropes in space group P2/m from 279 possible structures by high-throughput screening accompanied by graph and group theory based on random strategy (RG(2)) code. The mechanical, electronic and optical properties of these structures were studied in detail. These novel silicon allotropes demonstrate various electronic structures, including metal, direct/quasi direct bandgap structure, and indirect bandgap structures. These new silicon allotropes demonstrate various electronic structures, including metal, direct/quasi direct bandgap structure, and indirect bandgap structures. Besides different electronic bandgap structures, all 23 structures exhibit strong absorption in the visible light region and P2/m-15 demonstrates the excellent mechanical properties (Bulk modulus beyond 80 GPa). Based on their nice stability, good mechanical, electronic and optical properties validated by the ab inito molecular dynamics simulation, phonon spectra and density functional theoretical calculations, these predicted silicon allotropes provide not only ideas for the synthesis of new silicon allotropes but also dawn for expanding the application of semiconductor materials.
引用
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页数:10
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共 45 条
[1]  
Adachi S., 2004, Handbook on Physical Properties of Semiconductors, V1-3
[2]   The electronic structure of RbTiOPO4 and the effects of the A-site cation substitution in KTiOPO4-family crystals [J].
Atuchin, V. V. ;
Kesler, V. G. ;
Meng, Guangsi ;
Lin, Z. S. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (40)
[3]   SCATTERING OF ELECTRONS IN CRYSTALS IN THE PRESENCE OF LARGE ELECTRIC FIELDS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :69-71
[4]   ELECTRICAL-PROPERTIES OF SEMIMETALLIC SILICON-III AND SEMICONDUCTIVE SILICON-IV AT AMBIENT PRESSURE [J].
BESSON, JM ;
MOKHTARI, EH ;
GONZALEZ, J ;
WEILL, G .
PHYSICAL REVIEW LETTERS, 1987, 59 (04) :473-476
[5]   Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium [J].
Cahangirov, S. ;
Topsakal, M. ;
Akturk, E. ;
Sahin, H. ;
Ciraci, S. .
PHYSICAL REVIEW LETTERS, 2009, 102 (23)
[6]   First principles methods using CASTEP [J].
Clark, SJ ;
Segall, MD ;
Pickard, CJ ;
Hasnip, PJ ;
Probert, MJ ;
Refson, K ;
Payne, MC .
ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 2005, 220 (5-6) :567-570
[7]  
Curtarolo S, 2013, NAT MATER, V12, P191, DOI [10.1038/nmat3568, 10.1038/NMAT3568]
[8]   High-throughput DFT calculations of formation energy, stability and oxygen vacancy formation energy of ABO3 perovskites [J].
Emery, Antoine A. ;
Wolverton, Chris .
SCIENTIFIC DATA, 2017, 4
[9]   High-throughput calculation screening for new silicon allotropes with monoclinic symmetry [J].
Fan, Qingyang ;
Wu, Jie ;
Zhao, Yingbo ;
Song, Yanxing ;
Yun, Sining .
IUCRJ, 2023, 10 :464-474
[10]   Si-C alloys with direct band gaps for photoelectric application [J].
Fan, Qingyang ;
Hao, Bingqian ;
Zhao, Yingbo ;
Song, Yanxing ;
Zhang, Wei ;
Yun, Sining .
VACUUM, 2022, 199