A Physics-Based Analytic Model for p-GaN HEMTs

被引:3
作者
Bhat, Zarak [1 ]
Ahsan, Sheikh Aamir [1 ]
机构
[1] Natl Inst Technol Srinagar, Dept Elect & Commun Engn, Nanoelect Res & Dev Lab, Srinagar 190006, Jammu & Kashmir, India
关键词
Wide band gap semiconductors; MODFETs; HEMTs; Aluminum gallium nitride; Mathematical models; Logic gates; Semiconductor process modeling; Analytical model; drain-current; e-mode; p-GaN gate high electron mobility transistors (p-GaN HEMTs); Schr & ouml; dinger-Poisson; THRESHOLD VOLTAGE; ALGAN/GAN HEMTS; COMPACT MODEL; DENSITY; POWER;
D O I
10.1109/TED.2024.3453785
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article introduces a physics-based framework for modeling drain current in p-GaN gate high electron mobility transistors (p-GaN HEMTs). The model is constructed on fundamental electrostatic equations and adopts a self-consistent approach to solve the Schr & ouml;dinger-Poisson equations, while using 2-D density of states (2D-DOSs) and Fermi-Dirac (FD) statistics for carriers. Drift-diffusion formalism is integrated into the model to simulate carrier flow within the device, and the model's accuracy is validated against experimentally measured data for p-GaN HEMTs. The model, by virtue of its physics-based foundation, is further tested to provide insights into various behavioral nuances and characteristics of the devices and, as such, presents an avenue to supplement time-consuming TCAD simulations, facilitating the development of e-mode pGaN devices.
引用
收藏
页码:6544 / 6551
页数:8
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