Room-Temperature Magneto-Photoresponse in All-2D Optoelectronic Devices for In-Sensor Vision Systems

被引:3
作者
Zhu, Wenxuan [1 ]
Sun, Jiacheng [2 ]
Wang, Yuyan [2 ]
Li, Yuankun [3 ]
Bai, Hua [1 ]
Wang, Qian [1 ]
Han, Lei [1 ]
Zhang, Qingtian [3 ]
Wu, Huaqiang [2 ,3 ]
Song, Cheng [1 ]
Pan, Feng [1 ]
机构
[1] Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat, MOE, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol, Beijing 100084, Peoples R China
[3] Tsinghua Univ, Sch Integrated Circuits, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
2D magnetic materials; 2D optoelectronic devices; in-sensor vision systems; magneto-band structure effect; magneto-photoresponse; PHOTODETECTORS; MAGNETORESISTANCE; CR2GE2TE6;
D O I
10.1002/adma.202403624
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Interplay between magnetism and photoelectric properties introduces the effective control of photoresponse in optoelectronic devices via magnetic field, termed as magneto-photoresponse. It enriches the application scenarios and shows potential to construct in-sensor vision systems for artificial intelligence with gate-free architecture. However, achieving a simultaneous existence of room-temperature magnetism and notable photoelectric properties in semiconductors is a great challenge. Here, the room-temperature magneto-photoresponse is accomplished in all-2D optoelectronic devices, employing 2D ferromagnet Fe3GaTe2 as the source and drain, with WSe2 forming the channel. The interplay between room-temperature magnetism and photoelectric properties is realized by introducing the unique magneto-band structure effect from 2D interface, resulting in magneto-tunable charge transfer between Fe3GaTe2 and WSe2. The photocurrent in this 2D optoelectronic device exhibits robust response to both the direction and amplitude of external magnetic fields. Utilizing constructed 2D optoelectronic devices with magneto-photoresponse, traditional gate-controlled phototransistors are replaced and a prototype in-sensor vision system with visual adaptation, significantly improving the recognition accuracy to over four times in low-contrast environments is established. These findings pave a way for achieving high-temperature magneto-photoresponse, thereby guiding the construction of robust in-sensor vision systems toward high performance and broad applications. In 2D optoelectronic devices with the electrodes of 2D ferromagnet Fe3GaTe2 and channel of WSe2, the photoresponse is effectively controlled by magnetic fields at room temperature. This room-temperature magneto-photoresponse, achieved by the 2D magneto-band structure, lays the groundwork for multidimensional responsive optoelectronic devices. It holds promise for the development of robust in-sensor machine vision systems with gate-free architectures. image
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页数:8
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