Impact of oxygen vacancy on luminescence properties of dysprosium-doped zinc oxide thin films

Pristine and dysprosium-doped ZnO thin films, highly c-axis oriented, were grown on a c-Al(2)O(3 )substrate using the pulsed laser deposition technique. During the deposition process, the growth was impacted by changes in the oxygen partial pressure. The structural, optical, and compositional properties of the pristine and dysprosium-doped ZnO thin films were systematically characterized using various state-of-the-art experimental techniques. The crystallinity associated with these films was observed to be highly dependent on the oxygen partial pressure maintained during the growth process. An average optical transparency of more than similar to 90% in the visible spectral range (i.e., 400-800 nm) was observed for all specimens. For doped specimens, expected intra-4f(n) emissions of (dysprosium) Dy3+ ions that emanated from the F-4(9/2) energy state were observed in room-temperature photoluminescence spectra under direct excitation. The Jacobian-transformed wavelength-to-energy plot for Dy-doped ZnO thin films in the UV-Visible region revealed intriguing findings. Specifically, it depicted a prominent peak at 2.82 eV, indicative of the energy state of Dy3+ ions, alongside intense band-edge emission and various defect-related emissions. The intensity of these transitions was observed to depend on the oxygen partial pressure kept during deposition. An x-ray photoelectron spectroscopy analysis of the doped specimen confirmed the +3 oxidation state of dysprosium into the ZnO matrix. These results provide a promising approach for controlling the doping and growth strategy of Dy-doped ZnO thin films, thereby opening up a wide range of applications and enhancement for next-generation optoelectronic devices.