Luminescence Characteristics of Chromium-Doped by High-Temperature Diffusion CVD-ZnSe

被引：0

作者：

Kalinushkin, V. P. ^{[1
]}

Gladilin, A. A. ^{[1
]}

Uvarov, O. V. ^{[1
]}

Mironov, S. A. ^{[1
]}

Ilichev, N. N. ^{[1
]}

Studenikin, M. I. ^{[1
]}

Storozhevykh, M. S. ^{[1
]}

Gavrishchuk, E. M. ^{[2
]}

Ikonnikov, V. B. ^{[2
]}

Timofeeva, N. A. ^{[2
]}

机构：

[1] Russian Acad Sci, Prokhorov Inst Gen Phys, Moscow 119991, Russia

[2] Russian Acad Sci, Devyatykh Inst Chem High Pur Subst, Nizhnii Novgorod 603951, Russia

来源：

SEMICONDUCTORS | 2024年 / 58卷 / 04期

关键词：

zinc selenide; two-photon confocal microscopy; semiconductors; defects; IRON;

D O I：

10.1134/S1063782624040067

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using two-photon confocal microscopy in the spectral range of 0.44-0.73 mu m, the spatial distribution of the luminescent characteristics of CVD-ZnSe doped with chromium using the HIP process was studied. It has been established that as a result of this process, four types of impurity-defect centers are formed in the crystal. It is shown that their formation involves point centers that form in the doping zone and diffuse deep into the crystal. Assumptions are made about the nature of these point centers.

引用

页码：315 / 322

页数：8

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