An Erbium-Doped Waveguide Amplifier on Thin Film Lithium Niobate with an Output Power Exceeding 100 mW

被引：16

作者：

Bao, Rui ^{[1
,2
]}

Fang, Zhiwei ^{[1
]}

Liu, Jian ^{[1
]}

Liu, Zhaoxiang ^{[1
]}

Chen, Jinming ^{[1
]}

Wang, Min ^{[1
]}

Wu, Rongbo ^{[1
]}

Zhang, Haisu ^{[1
]}

Cheng, Ya ^{[1
,2
,3
,4
,5
,6
,7
,8
]}

机构：

[1] East China Normal Univ, Sch Phys & Elect Sci, Extreme Optoelectromech Lab XXL, Shanghai 200241, Peoples R China

[2] East China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech SIOM, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech SIOM, CAS Ctr Excellence Ultraintense Laser Sci, Shanghai 201800, Peoples R China

[5] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China

[6] Shandong Normal Univ, Collaborat Innovat Ctr Light Manipulat & Applicat, Jinan 250358, Peoples R China

[7] Hefei Natl Lab, Hefei 230088, Peoples R China

[8] East China Normal Univ, Joint Res Ctr Light Manipulat Sci & Photon Integra, Shanghai 200241, Peoples R China

来源：

LASER & PHOTONICS REVIEWS | 2025年 / 19卷 / 01期

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

erbium-doped waveguide amplifier; high-power; large mode area; thin film lithium niobate; MODE-AREA FIBERS; TRANSITIONS;

D O I：

10.1002/lpor.202400765

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high-power thin film lithium niobate (TFLN) erbium-doped waveguide amplifier (EDWA) is demonstrated with a maximum on-chip output power of 113 mW and a gain of 16 dB. The on-chip integrated EDWA is composed of large mode area (LMA) waveguide structures with a total length of 7 cm and a footprint of 1 x 1 cm2. Segmented LMA waveguides are connected with waveguide tapers to achieve on-chip mode conversion, which maintains single-mode propagation all over the EDWA even at the waveguide bends. The design leads to a significant increase in the amplified signal power by orders of magnitude and will open an avenue for applications such as on-chip high-power lasers and amplifier systems. A high-power thin film lithium niobate erbium-doped waveguide amplifier (EDWA) is demonstrated with a maximum on-chip output power of 113 mW and a gain of 16 dB. The on-chip integrated EDWA is composed of large mode area (LMA) waveguide structures with a total length of 7 cm and a footprint of 1 x 1 cm2. image

引用

页数：6

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