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[1]
A comparison on the electrical characteristics of SiO2, SiON and SiN as the gate insulators for the fabrication of AlGaN/GaN metal-oxide/insulator-semiconductor high-electron mobility-transistors
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,
2005, 44 (7A)
:4911-4913