Fabrication of Conductive Domain Walls in x-cut Congruent Thin-film Lithium Niobate Using an Electrical-field Poling Technique (Invited)

被引:0
作者
Su Yawen [1 ]
Chen Haiwei [1 ]
Zhao Mengwei [1 ]
Niu Yunfei [2 ]
Li Chen [1 ]
Zhang Yong [1 ]
Yang Shaoguang [1 ]
Zhu Shining [1 ]
Hu Xiaopeng [1 ]
机构
[1] Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Coll Engn & Appl Sci, Nanjing 210008, Jiangsu, Peoples R China
[2] Zhejiang Lab, Hangzhou 311121, Zhejiang, Peoples R China
关键词
thin-film lithium niobate; electric field poling; head-to-head/tail-to-tail domain; conduction characteristics of domain wall; 2ND-HARMONIC GENERATION; FREQUENCY-CONVERSION; PHOTON-PAIRS; EFFICIENT; MODULATOR; SILICON;
D O I
10.3788/LOP240952
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Conductive ferroelectric domain walls have attracted increasing research interest in the field of nanoelectronics, and the fabrication technique for such domain walls is vital. In this study, we investigated in detail the fabrication of conductive domain walls in x-cut congruent thin-film lithium niobate (TFLN) using an electrical- field poling technique. The ferroelectric domain structures can be controlled through the applied electrical field and applied pulse numbers, and the domain inversion process is related to the conduction characteristics of the domain walls. The domain structures in TFLN are revealed using confocal second-harmonic microscopy and piezoresponse force microscopy. The results provide further directions for the development and application of conductive domain walls in TFLN.
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页数:7
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