Electrochemical Doping of Two-Dimensional Superatomic Materials

被引：1

作者：

He, Shoushou ^{[1
]}

Yu, Jessica ^{[1
]}

Stinson, William D. H. ^{[2
]}

Looney, Claire A. ^{[3
]}

Okuno, Saya ^{[1
]}

Crowther, Andrew C. ^{[3
]}

Esposito, Daniel V. ^{[2
]}

Steigerwald, Michael L. ^{[1
]}

Roy, Xavier ^{[1
]}

Nuckolls, Colin ^{[1
]}

机构：

[1] Columbia Univ, Dept Chem, New York, NY 10027 USA

[2] Columbia Univ, Dept Chem Engn, New York, NY 10027 USA

[3] Barnard Coll, Biol Dept, New York, NY 10027 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2024年 / 146卷 / 28期

基金：

加拿大自然科学与工程研究理事会;

关键词：

CRYSTAL;

D O I：

10.1021/jacs.4c06187

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report an electrochemical method for doping two-dimensional (2D) superatomic semiconductor Re6Se8Cl2 that significantly improves the material's electrical transport while retaining the in-plane and stacking structures. The electrochemical reduction induces the complete dissociation of chloride anions from the surface of each superatomic nanosheet. After the material is dehalogenated, we observe the electrical conductivity (sigma) increases by two orders of magnitude while the 3D electron carrier density (n(3D)) increases by three orders of magnitude. In addition, the thermal activation energy (E-a) and electron mobility (mu(e)) decrease. We conclude that we have achieved effective electron-doping in 2D superatomic Re6Se8Cl2, which significantly improves the electrical transport properties. Our work sets the foundation for electrochemically doping and tuning the transport properties of other 2D superatomic materials.

引用

页码：18861 / 18865

页数：5

共 20 条

[1] Doping of silicon nanocrystals [J].